Research for GaN technologies, devices and applications to address the challenges of the future GaN roadmap
UltimateGaN will safeguard Europe’s leading position in power semiconductors and high-performance RF applications by driving an innovative breakthrough with the next generation of Gallium Nitride (GaN) technologies. Several predecessor projects assured the availability of the first generation of European GaN-devices, also revealing that the challenges of these technologies have been heavily underestimated yet clarifying the high potential of GaN in overcoming the persistant threats of higher electric fields, current densities and power densities related to the necessity of device shrinkage.
A new concept - following a vertical approach to address research throughout the entire supply chain of technology, packaging, reliability and application - will significantly improve effectiveness that goes beyond the limits of silicon-based semiconductors in combination with packages that fully valorise the shrink-path of GaN power devices, but which are not yet ready.
UltimateGaN’s unique approach addresses, among others, the following innovative applications with the view to drive digitalisation and energy efficiency for 5G, Smart Grids and Smart Mobility that goes hand in hand with a significant reduction of the CO2 footprint:
- Extremely efficient server power supply enabling lower energy consumption in data centres
- Benchmark Photovoltaic inverters in terms of efficiency and size, to foster the use of renewable energies
- Affordable 5G-Amplifiers up to mm-wave, enabling a faster 5G rollout
- GaN-powered LIDAR application to enable autonomous driving
- Highest efficiency μ-Grid-converters and On-Board Chargers
The global state-of-the-art first generation GaN devices are mainly based on US and Asian suppliers. Only a cooperative project like UltimateGaN with European market leaders and world-class researchers can take on the challenges and bring Europe at the forefront of GaN-enabled opportunities.
